2008. 10. 2 1/6 semiconductor technical data kf13N60N n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for switching mode power supplies. features v dss(min.) = 600v, i d = 13a drain-source on resistance : r ds(on) =0.56(max.) @v gs =10v qg(typ.) =36nc maximum rating (tc=25 ) g d s characteristic symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 13 a pulsed (note1) i dp 32 single pulsed avalanche energy (note 2) e as 870 mj repetitive avalanche energy (note 1) e ar 22.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 215 w derate above25 1.72 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.58 /w thermal resistance, junction-to-ambient r thja 40 /w to-3p(n)-e c g l k r a d b h f i d pp t 1. gate 2. drain 3. source j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ 801 n 2 kf13n60 1 2 product name lot no 1 marking free datasheet http://
2008. 10. 2 2/6 kf13N60N revision no : 1 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.63 - v/ drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =6.5a - 0.47 0.56 dynamic total gate charge q g v ds =480v, i d =13a v gs =10v (note4,5) - 36 - nc gate-source charge q gs - 8.5 - gate-drain charge q gd - 13.5 - turn-on delay time t d(on) v dd =300v, r g =25 , i d =13a (note4,5) - 30 - ns turn-on rise time t r - 40 - turn-off delay time t d(off) - 115 - turn-off fall time t f - 55 - input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1445 - pf output capacitance c oss - 185 - reverse transfer capacitance c rss - 20 - source-drain diode ratings continuous source current i s v gs 2008. 10. 2 3/6 kf13N60N revision no : 1 normalized breakdown voltage bv dss gate - source voltage v gs (v) fig1. i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 -1 10 1 68 410 2 fig2. i d - v gs fig3. bv dss - t j fig4. r ds(on) - i d -100 -50 0.8 0.9 1.2 1.1 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) fig5. i s - v sd 0.4 0.8 1.0 1.2 0.6 1.4 1.8 reverse drain current i s (a) 1.2 0.6 0.2 1.0 010 520 15 junction temperature tj ( ) c source - drain voltage v sd (v) 10 0 10 -1 10 1 10 2 fig6. r ds(on) - t j junction temperature t j ( ) 0 50 -100 -50 100 150 normalized on resistance 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c v gs =10v i ds = 6a v gs = 0v i ds = 250 100 c 25 c 100 c 25 c 1100 0.1 10 0.1 1 10 100 v gs =10v v gs =6v v gs =10v v gs =6v v ds =20v v gs =5v free datasheet http://
2008. 10. 2 4/6 kf13N60N revision no : 1 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) 0 12 10 6 2 4 8 35 40 15 5 25 20 30 10 0 fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 1 10 2 10 1 10 2 10 3 10 4 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 0 10 2 6 14 8 4 12 75 150 125 50 100 25 drain current i d (a) i d =13a c junction temperature t j ( ) fig10. i d - t j operation in this area is limited by r ds(on) v ds = 480v v ds = 300v v ds = 120v t c = 25 t j = 150 single pulse c c dc 10ms 1ms 100 s 100ms fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 010203040 c rss c oss c iss time (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 fig11. transient thermal response curve transient thermal resistance dut y=0.5 s in gle pulse 0.05 0. 02 0.2 0.01 0.1 t 1 t 2 p dm - duty factor, d= t 1 /t 2 - r th(j-c) = 0.58 c/w max. free datasheet http://
2008. 10. 2 5/6 kf13N60N revision no : 1 fig12. gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss free datasheet http://
2008. 10. 2 6/6 kf13N60N revision no : 1 fig15. source - drain diode reverse recovery and dv /dt i f i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.8 v dss free datasheet http://
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